Computer simulation of GaAs and SOI devices using TCAD tools: An REU project

被引：0

作者：

Goel, A ^{[1
]}

Bodalia, M ^{[1
]}

Innus, M ^{[1
]}

机构：

[1] Michigan Technol Univ, Dept Elect Engn, Houghton, MI 49931 USA

来源：

PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we have briefly described an NSF-sponsored undergraduate research site established at the Michigan Technological University and have outlined one of the undergraduate research projects whose goal was to explore the capabilities of several TCAD tools to study the structure formation and I-V characteristics of five different GaAs and SOI devices including short- and long-channel JFETs, digital GaAs E-MESFETs, HEMTs and SOI BJTs.

引用

页码：226 / 229

页数：4