The Strong Dependence of Polarization Fatigue on Poling-Voltage Conditions in Ferroelectric Vinylidene Fluoride and Trifluoroethylene Copolymer Films

被引:8
作者
Zhu, GuoDong [1 ]
Cong, Yu [1 ]
Zhang, JiHao [1 ]
Luo, XiaoYa [1 ]
Yan, XueJian [1 ]
机构
[1] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
基金
高等学校博士学科点专项科研基金; 中国国家自然科学基金;
关键词
Ferroelectric capacitors; ferroelectric memories; ferroelectric polymer; polarization fatigue; poly(vinylidene fluoride) and its copolymer with trifluoroethylene [P(VDF-TrFE); THIN-FILMS;
D O I
10.1109/LED.2010.2041320
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Recently, polarization fatigue in ferroelectric polymers has attracted much attention due to their potentials in nonvolatile memory devices, although the mechanism behind is still an open question. In this letter, we report the strong dependence of polarization fatigue on poling voltages, which indicates that the application of a poling electric field slightly below the coercive field can greatly degrade the fatigue endurance. This phenomenon may be directly related to the fatigue mechanism, and its origin is discussed based on the understanding of the injection and redistribution of space charges in ferroelectric films.
引用
收藏
页码:359 / 361
页数:3
相关论文
共 14 条
[1]   Discrimination between bulk and interface scenarios for the suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O3 thin films capacitors with Pt electrodes [J].
Colla, EL ;
Taylor, DV ;
Tagantsev, AK ;
Setter, N .
APPLIED PHYSICS LETTERS, 1998, 72 (19) :2478-2480
[2]   Ferroelectric polymer Langmuir-Blodgett films for nonvolatile memory applications [J].
Ducharme, S ;
Reece, TJ ;
Othon, CM ;
Rannow, RK .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2005, 5 (04) :720-735
[3]   Organic ferroelectric diodes with long retention characteristics suitable for non-volatile memory applications [J].
Fujisaki, Sumiko ;
Ishiwara, Hiroshi ;
Fujisaki, Yoshihisa .
APPLIED PHYSICS EXPRESS, 2008, 1 (08) :0818011-0818013
[4]   Factors governing ferroelectric switching characteristics of thin VDF/TrFE copolymer films [J].
Furukawa, Takeo ;
Nakajima, Takashi ;
Takahashi, Yoshiyuki .
IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 2006, 13 (05) :1120-1131
[5]   Effect of ferroelectric/metal interface structure on polarization reversal [J].
Horie, Satoshi ;
Ishida, Kenji ;
Kuwajima, Shuichiro ;
Kobayashi, Kei ;
Yamada, Hirofumi ;
Matsushge, Kazumi .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (02) :1259-1262
[6]   ELECTRIC-FIELD DEPENDENCE OF CRYSTALLINITY IN POLY(VINYLIDENE FLUORIDE) [J].
KEPLER, RG ;
ANDERSON, RA ;
LAGASSE, RR .
PHYSICAL REVIEW LETTERS, 1982, 48 (18) :1274-1277
[7]   PIEZOELECTRICITY AND RELATED PROPERTIES OF VINYLIDENE FLUORIDE AND TRIFLUOROETHYLENE COPOLYMERS [J].
KOGA, K ;
OHIGASHI, H .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) :2142-2150
[8]   Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer [J].
Lee, Kwang H. ;
Lee, Gyubaek ;
Lee, Kimoon ;
Oh, Min Suk ;
Im, Seongil .
APPLIED PHYSICS LETTERS, 2009, 94 (09)
[9]  
LI J, 1994, STUDY SWITCHING PROC, pCH2
[10]  
LOU XJ, 2009, J APPL PHYS, V105