High-purity semi-insulating 4H-SiC for microwave device applications

被引：53

作者：

Jenny, JR ^{[1
]}

Malta, DP ^{[1
]}

Müller, SG ^{[1
]}

Powell, AR ^{[1
]}

Tsvetkov, VF ^{[1
]}

Hobgood, HM ^{[1
]}

Glass, RC ^{[1
]}

Carter, CH ^{[1
]}

机构：

[1] Cree Inc, Durham, NC 27703 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2003年 / 32卷 / 05期

关键词：

high-purity semi insulating; HPSI; 4H-SiC; seeded sublimation; PVT; SIMS; EPR; OAS; DLTS; Hall effect; resistivity; thermal conductivity;

D O I：

10.1007/s11664-003-0173-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-purity, semi-insulating (HPSI) 4H-SiC crystals with diameters up to 75 mm have been grown by the seeded sublimation technique without the intentional introduction of elemental deep-level dopants, such as vanadium. Wafers cut from these crystals exhibit homogeneous activation energies near mid gap and thermally stable semi-insulating (SI) behavior (>10(9) ohm-cm) throughout device processing. Secondary ion mass spectroscopy, deep-level transient spectroscopy, optical admittance spectroscopy, and electron paramagnetic resonance data suggest that the SI behavior originates from several deep levels associated with intrinsic point defects. Micropipe densities in HPSI substrates have been demonstrated to be as low as 10 cm(-2) in 2-in. substrates, and the room-temperature thermal conductivity of this material is near the theoretical maximum of 5 W/cm(.)K for 4H-SiC. Devices fabricated on these HPSI wafers do not exhibit any substrate related back-gating effects and have power densities as high as 5.2 W/mm with 63% power added efficiency.

引用

页码：432 / 436

页数：5

共 17 条

[1] MODEL FOR LATTICE THERMAL CONDUCTIVITY AT LOW TEMPERATURES [J].