Ultracompact display pixels: Tunnel junction nanowire photonic crystal laser

被引:27
作者
Ra, Yong-Ho [1 ]
Lee, Cheul-Ro [2 ]
机构
[1] Korea Inst Ceram Engn & Technol, Opt & Elect Component Mat Ctr, Jinju 52851, South Korea
[2] Chonbuk Natl Univ, Sch Adv Mat Engn, Engn Coll, Deokjin Dong 664-14, Jeonju 561756, South Korea
基金
新加坡国家研究基金会;
关键词
GaN; Laser; Nanowire; Photonic crystal; Display; SURFACE-EMITTING LASERS; HIGH-POWER; DYNAMICS; DIODES; FIBER;
D O I
10.1016/j.nanoen.2021.105870
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Visual reality (VR) and augmented reality (AR) displays require ultra-high definition pixels with smaller sizes, narrower pitches and vertical beam angles. Unfortunately, micro-LED devices have an insurmountable challenge in reducing the pixel pitch due to the wide divergence angle of light source. Alternatively, a vertical-cavity surface-emitting laser is emerging as the most promising candidate for future high-definition display applications. Here, we have shown the world's first display implementation using an electrically injected DBR-free surface-emitting photonic crystal laser. We have also introduced, for the first time, a tunnel junction nanowire structure in the surface emitting photonic crystal laser system. With use of the tunnel junction, highly resistive pGaN/metal contact was completely removed. The photonic crystal effect by photonic band edge mode eliminated the use of DBRs, which is essential for laser devices. We have further demonstrated that the spectral linewidth can be readily scalable by controlling the spacing of nanowires. Moreover, it was confirmed that such scalable spectral linewidths remain virtually invariant under the different temperature range of 12-375 K, which are critical to color accuracy in display. An ultra-compact micro-display with a pitch of 10 mu m and a pixel size of 4 mu m2 was realized by electrically injected DBR-free surface-emitting photonic crystal laser devices.
引用
收藏
页数:9
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