Optimization of multilayer reflectors for extreme ultraviolet lithography

被引:17
作者
Bal, MF [1 ]
Singh, M [1 ]
Braat, JJM [1 ]
机构
[1] Delft Univ Technol, Dept Appl Phys, Opt Res Grp, NL-2628 CJ Delft, Netherlands
来源
JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS | 2004年 / 3卷 / 04期
关键词
multilayer; optimization; extreme ultraviolet lithography; graded multilayers; imaging;
D O I
10.1117/1.1793171
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Multilayer interference coatings on reflective elements in extreme ultraviolet (EUV) projection lithography systems introduce phase and amplitude variations at reflection, which have important implications for imaging properties, e.g., resolution, depth of focus, and tolerances. We discuss the numerical results of the optical effects of multilayers (MLs) and the inclusion of these effects in optical design. This numerical study demonstrates the advantages of spatially varying (graded) MLs compared to multilayers with constant layer thicknesses. We present a new method to calculate the optimum grading of multilayers. Using this new method, we are able to fully optimize the wavefronts emerging from the projection system toward the image plane. (C) 2004 Society of Photo-Optical Instrumentation Engineers.
引用
收藏
页码:537 / 544
页数:8
相关论文
共 11 条
[1]   Improved reflectance and stability of Mo-Si multilayers [J].
Bajt, S ;
Alameda, JB ;
Barbee, TW ;
Clift, WM ;
Folta, JA ;
Kaufmann, B ;
Spiller, EA .
OPTICAL ENGINEERING, 2002, 41 (08) :1797-1804
[2]   SIMPLE ANALYTICAL EXPRESSIONS FOR THE REFLECTIVITY AND THE PENETRATION DEPTH OF A BRAGG MIRROR BETWEEN ARBITRARY [J].
BROVELLI, LR ;
KELLER, U .
OPTICS COMMUNICATIONS, 1995, 116 (4-6) :343-350
[3]   Image formation in EUV lithography: Multilayer and resist properties [J].
Cerrina, F ;
Bollepalli, S ;
Khan, M ;
Solak, H ;
Li, W ;
He, D .
MICROELECTRONIC ENGINEERING, 2000, 53 (1-4) :13-20
[4]  
CODE Y, 2002, OPTICAL RES ASS
[5]   Effects of Mo/Si multilayer coatings on the imaging characteristics of an extreme-ultraviolet lithography system [J].
Duddles, NJ .
APPLIED OPTICS, 1998, 37 (16) :3533-3538
[6]   Multilayer-coating-induced aberrations in extreme-ultraviolet lithography optics [J].
Liang, C ;
Descour, MR ;
Sasian, JM ;
Lerner, SA .
APPLIED OPTICS, 2001, 40 (01) :129-135
[7]  
MACLEOD HA, 1986, THIN FILM OPTICAL FI, P11
[8]   Wave-front correction methods for extreme-ultraviolet multilayer reflectors [J].
Singh, M ;
Bal, MF ;
Braat, JJM ;
Joyeux, D ;
Dinger, U .
APPLIED OPTICS, 2003, 42 (10) :1847-1851
[9]  
SPILLER E, 1994, SOFT XRAY OPTICS, pCH8
[10]   Extreme ultraviolet lithography [J].
Stulen, RH ;
Sweeney, DW .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (05) :694-699