Effect of Neutron Irradiation on High Voltage 4H-SiC Vertical JFET Characteristics: Characterization and Modeling

被引：11

作者：

Popelka, S. ^{[1
]}

Hazdra, P. ^{[1
]}

Sharma, R. ^{[1
]}

Zahlava, V. ^{[1
]}

Vobecky, J. ^{[1
]}

机构：

[1] Czech Tech Univ, Dept Microelect, Prague 6, Czech Republic

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2014年 / 61卷 / 06期

关键词：

Junction field effect transistor (JFET); neutrons; radiation effects; silicon carbide (SiC); SILICON-CARBIDE; 4H; DEFECTS; 3C;

D O I：

10.1109/TNS.2014.2358957

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of neutron irradiation on commercial vertical high voltage normally-OFF SiC power N-JFETs was investigated. JFETs were irradiated with 1 MeV neutron equivalent fluences up to 4 x 10(14) cm(-2). Measurement showed that fast neutrons introduce deep levels acting mostly as deep acceptor centers. These centers gradually compensate lightly doped channel and drift regions of JFETs. As a result, characteristics are deteriorated, the JFET threshold voltage gradually increases and transconductance is lowered. At fluences higher than 4 x 10(14) cm(-2), the low doped n-regions are fully compensated and transistor loses its functionality. The 2D physicalmodel of JFET in ATLAS simulator was developed and calibrated including the neutron irradiation effects. Simulation showed a good agreement with experimental data. This confirmed that carrier removal in the channel and drift region by acceptors centers introduced by neutrons is a dominant reason of SiC JFET degradation.

引用

页码：3030 / 3036

页数：7

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