Effect of Neutron Irradiation on High Voltage 4H-SiC Vertical JFET Characteristics: Characterization and Modeling

被引：11
|
作者：
Popelka, S. [1 ]
Hazdra, P. [1 ]
Sharma, R. [1 ]
Zahlava, V. [1 ]
Vobecky, J. [1 ]
机构：
[1] Czech Tech Univ, Dept Microelect, Prague 6, Czech Republic
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2014年 / 61卷 / 06期
关键词：
Junction field effect transistor (JFET); neutrons; radiation effects; silicon carbide (SiC); SILICON-CARBIDE; 4H; DEFECTS; 3C;
D O I：
10.1109/TNS.2014.2358957
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of neutron irradiation on commercial vertical high voltage normally-OFF SiC power N-JFETs was investigated. JFETs were irradiated with 1 MeV neutron equivalent fluences up to 4 x 10(14) cm(-2). Measurement showed that fast neutrons introduce deep levels acting mostly as deep acceptor centers. These centers gradually compensate lightly doped channel and drift regions of JFETs. As a result, characteristics are deteriorated, the JFET threshold voltage gradually increases and transconductance is lowered. At fluences higher than 4 x 10(14) cm(-2), the low doped n-regions are fully compensated and transistor loses its functionality. The 2D physicalmodel of JFET in ATLAS simulator was developed and calibrated including the neutron irradiation effects. Simulation showed a good agreement with experimental data. This confirmed that carrier removal in the channel and drift region by acceptors centers introduced by neutrons is a dominant reason of SiC JFET degradation.
引用
收藏
页码：3030 / 3036
页数：7
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