Electric field mediated non-volatile tuning magnetism in CoPt/PMN-PT heterostructure for magnetoelectric memory devices

被引：8
|
作者：
Yang, Y. T. [1 ,2 ,3 ]
Li, J. [1 ,2 ,3 ]
Peng, X. L. [1 ]
Wang, X. Q. [1 ]
Wang, D. H. [2 ,3 ]
Cao, Q. Q. [2 ,3 ]
Du, Y. W. [2 ,3 ]
机构：
[1] China Jiliang Univ, Zhejiang Prov Key Lab Magnetism, Coll Mat Sci & Engn, Hangzhou 310018, Zhejiang, Peoples R China
[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[3] Nanjing Univ, Jiangsu Key Lab Nano Technol, Nanjing 210093, Jiangsu, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2016年 / 119卷 / 07期
基金：
中国国家自然科学基金;
关键词：
MAGNETIZATION REVERSAL; ATOMIC LAYERS; ANISOTROPY; ALLOY; FILMS; MULTIFERROICS; MANIPULATION; RESISTANCE;
D O I：
10.1063/1.4942363
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a power efficient non-volatile magnetoelectric memory in the CoPt/(011)PMN-PT heterostructure. Two reversible and stable electric field induced coercivity states (i.e., high-H-C or low-H-C) are obtained due to the strain mediated converse magnetoelectric effect. The reading process of the different coercive field information written by electric fields is demonstrated by using a magnetoresistance read head. This result shows good prospects in the application of novel multiferroic devices. (C) 2016 AIP Publishing LLC.
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页数：4
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