Enhancement in electrical performance of thin-film silicon solar cells based on a micro- and nano-textured zinc oxide electrodes

被引：13

作者：

Chen, Ze ^{[1
]}

Zhang, Xiao-dan ^{[1
]}

Fang, Jia ^{[1
]}

Liang, Jun-hui ^{[1
]}

Liang, Xue-jiao ^{[1
]}

Sun, Jian ^{[1
]}

Zhang, De-kun ^{[1
]}

Wang, Ning ^{[1
]}

Zhao, Hui-xu ^{[1
]}

Chen, Xin-liang ^{[1
]}

Huang, Qian ^{[1
]}

Wei, Chang-chun ^{[1
]}

Zhao, Ying ^{[1
]}

机构：

[1] Nankai Univ, Inst Photo Elect Thin Film Devices & Technol, Key Lab Photoelect Thin Film Devices & Technol, Tianjin 300071, Peoples R China

来源：

APPLIED ENERGY | 2014年 / 135卷

关键词：

MOCVD-BZO; Micro- and nano-textured structure; Sputtering hydrogen-doped ZnO (HZO); a-Si:H solar cell; MICROCRYSTALLINE SILICON; SURFACE-MORPHOLOGY; LIGHT MANAGEMENT; ZNO LAYERS; LP-MOCVD; TCO; DESIGN;

D O I：

10.1016/j.apenergy.2014.08.097

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Boron-doped ZnO (BZO) films deposited by metal organic chemical vapor deposition (MOCVD) generally act as transparent conductive oxide films in hydrogenated amorphous silicon (a-Si:H) solar cells and exhibit a high external quantum efficiency (EQE) performance in the short-wavelength region. They, therefore, facilitate efficient use of sunlight in solar cells. However, sharp surface features on the BZO film may result in nano-cracks and voids in the cells. In this study, we devised a process for modifying these sharp features. The BZO films were smoothened by performing a sputtering hydrogen-doped ZnO (HZO) layer using a magnetron sputtering system. The a-Si:H solar cells based on BZO films subjected to this treatment exhibited a higher open-circuit voltage (V-oc), fill factor (FF), and efficiency; however, their short-circuit current density (J(sc)) decreased slightly. In an attempt to increase the while maintaining a high electrical performance for the solar cells, we deposited an additional thin BZO film on the sputter-treated one to realize a micro- and nano-textured structure. This strategy succeeded in increasing J(sc). and also caused a further improvement in the V-oc, FF, and efficiency. As a result, over 10% efficiency of a-Si:H solar cells based on BZO electrodes with a micro- and nano-textured structure was achieved. Moreover, the thickness of the cell is only 300 nm. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：158 / 164

页数：7

共 40 条

[1] Surface morphology and light scattering properties of plasma etched ZnO:B films grown by LP-MOCVD for silicon thin film solar cells [J].