Semiconductor-metal transition in liquid As-Te mixtures

被引：27

作者：

Endo, H ^{[1
]}

Hoshino, H

Ikemoto, H

Miyanaga, T

机构：

[1] Fukui Inst Technol, Fac Engn, Fukui 9108505, Japan

[2] Hirosaki Univ Hosp, Fac Educ, Hirosaki, Aomori 0368560, Japan

[3] Toyama Univ, Fac Sci, Toyama 9308555, Japan

[4] Hirosaki Univ, Fac Sci & Technol, Hirosaki, Aomori 0368561, Japan

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2000年 / 12卷 / 28期

关键词：

D O I：

10.1088/0953-8984/12/28/306

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

EXAFS, conductivity and Hall coefficient measurements have been carried out for liquid As-Te mixtures. EXAFS analysis reveals the presence of chemical disorder marked by the existence of homopolar As-As and Te-Te pairs. At high temperature around 500 degrees C the network structure composed of threefold coordinated As atoms and twofold coordinated Te atoms is transformed into the twofold chain structure. The network-chain transformation is accompanied by the gradual semiconductor to metal transition which is demonstrated by the results for conductivity and Hall coefficient. The microscopic origin of the semiconductor to metal transition is discussed in connection with the structural modification.

引用

页码：6077 / 6099

页数：23

共 36 条

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