Abrupt dependence of ultrafast extrinsic photoconductivity on Er fraction in GaAs:Er

被引：12

作者：

Brown, E. R. ^{[1
]}

Mingardi, A. ^{[1
]}

Zhang, W. -D. ^{[1
]}

Feldman, A. D. ^{[2
]}

Harvey, T. E. ^{[2
]}

Mirin, R. P. ^{[2
]}

机构：

[1] Wright State Univ, Dept Phys & Elect Engn, Terahertz Sensor Lab, Dayton, OH 45435 USA

[2] NIST, Div Appl Phys, Boulder, CO 80305 USA

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 03期

关键词：

ERBIUM-DOPED-GAAS; 1.55; MU-M; THZ GENERATION; SEMICONDUCTORS; LIFETIME; ISLANDS; GROWTH; INGAAS;

D O I：

10.1063/1.4991876

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a study of room-temperature, ultrafast photoconductivity associated with a strong, subbandgap, resonant absorption around lambda = 1550nm in three MBE-grown GaAs epitaxial layers heavily doped with Er at concentrations of approximate to 2.9 x 10(18) (control sample), 4.4 x 10(20), and 8.8 x 10(20) cm(-3), respectively. Transmission-electron microscopy reveals lack of nanoparticles in the control sample, but abundant in the other two samples in the 1.0-to-3.0-nm-diameter range, which is consistent with the previously known results. We measure very high photoelectron (Hall) mobility (2.57 x 10(3) cm(2)/V-s) and terahertz power (46 mu W average) in the 4.4 x 10(20) sample, but then, an abrupt decay in these properties as well as the dark resistivity is seen as the Er doping is increased just 2 times. The Er doping has little effect on the picosecond-scale, 1550-nm photocarrier lifetime. Published by AIP Publishing.

引用

页数：4

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