The SiC(0001) √3 x √3 surface state

被引：8
作者：
Glans, PA [1 ]
Johansson, LI [1 ]
机构：
[1] Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden
来源：
SURFACE SCIENCE | 2000年 / 465卷 / 1-2期
关键词：
angle resolved photoemission; silicon carbide; single crystal surfaces; surface electronic phenomena (work function; surface potential; surface states; etc.);
D O I：
10.1016/S0039-6028(00)00756-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
An angle resolved photoemission study of the surface state on the 6H-SiC(0001) root3 x root3 surface is reported. The symmetry of the surface state is determined and effects induced after oxygen and sodium exposures are investigated. The periodicity of the surface dispersion is investigated in two different azimuthal directions. The expected root3 x root3 periodicity of a Mott-Hubbard ground state was not observed when going outside the first root3 x root3 Surface Brillouin Zone. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：L759 / L763
页数：5
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