A Millimeter-Wave Fundamental Frequency CMOS-Based Oscillator with High Output Power

被引：2
作者：
Thanh Dat Nguyen [1 ]
Park, Hangue [2 ]
Hong, Jong-Phil [1 ]
机构：
[1] Chungbuk Natl Univ, Sch Elect Engn, Cheongju 28644, South Korea
[2] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA
来源：
ELECTRONICS | 2019年 / 8卷 / 11期
基金：
新加坡国家研究基金会;
关键词：
oscillator; mm-wave; high output power; CMOS; PUSH; TRANSCEIVER; DESIGN; VCO;
D O I：
10.3390/electronics8111228
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
The millimeter-wave imaging approach is a promising candidate to satisfy the unmet needs of real-time biomedical imaging, such as resolution, focal area, and cost. As a part of the endeavor to make millimeter-wave imaging more feasible, this paper presents a CMOS oscillator generating a high output power at the millimeter-wave frequency range, with a high fundamental oscillation frequency. The proposed oscillator adopts a frequency-selective negative resistance topology to improve the negative transconductance and to increase the fundamental frequency of oscillation. The proposed oscillator was implemented in a 65 nm bulk CMOS process. The measured highest output power is -2.2 dBm at 190 GHz while dissipating 100 mW from a 2.8 V supply voltage.
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页数：11
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