A Millimeter-Wave Fundamental Frequency CMOS-Based Oscillator with High Output Power

被引：2

作者：

Thanh Dat Nguyen ^{[1
]}

Park, Hangue ^{[2
]}

Hong, Jong-Phil ^{[1
]}

机构：

[1] Chungbuk Natl Univ, Sch Elect Engn, Cheongju 28644, South Korea

[2] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA

来源：

ELECTRONICS | 2019年 / 8卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

oscillator; mm-wave; high output power; CMOS; PUSH; TRANSCEIVER; DESIGN; VCO;

D O I：

10.3390/electronics8111228

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The millimeter-wave imaging approach is a promising candidate to satisfy the unmet needs of real-time biomedical imaging, such as resolution, focal area, and cost. As a part of the endeavor to make millimeter-wave imaging more feasible, this paper presents a CMOS oscillator generating a high output power at the millimeter-wave frequency range, with a high fundamental oscillation frequency. The proposed oscillator adopts a frequency-selective negative resistance topology to improve the negative transconductance and to increase the fundamental frequency of oscillation. The proposed oscillator was implemented in a 65 nm bulk CMOS process. The measured highest output power is -2.2 dBm at 190 GHz while dissipating 100 mW from a 2.8 V supply voltage.

引用

页数：11

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