Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2O3 epitaxial films on Si (111)

被引：2

作者：

Lee, Y. J. ^{[1
]}

Lee, W. C. ^{[1
]}

Huang, M. L. ^{[1
]}

Wu, S. Y. ^{[1
]}

Nieh, C. W. ^{[1
]}

Hong, M. ^{[1
]}

Kwo, J. ^{[2
]}

Hsu, C. -H. ^{[3
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

[3] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 03期

关键词：

elemental semiconductors; epitaxial layers; lattice constants; molecular beam epitaxial growth; silicon; stress-strain relations; synchrotron radiation; X-ray diffraction; X-ray photoelectron spectra; yttrium compounds; GATE DIELECTRICS GD2O3; MAGNETIC-PROPERTIES; RARE-EARTH; SILICON; SI(111); LASER; LAYER;

D O I：

10.1116/1.3275724

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The strain/relaxation behavior of nanometer thick Y2O3 (111) epitaxially grown on Si (111) has been investigated with x-ray diffraction using synchrotron radiation. The authors systematically measured a series of Bragg reflections to determine the lattice parameters of Y2O3 films with thickness ranging from 1.6 to 9.5 nm. The strain state of the oxide lattice along surface normal and lateral directions is analyzed as a function of the oxide thickness. The spectra of Si 2p and Y 3d, obtained with in situ angle-resolved x-ray photoelectron spectroscopy on Y2O3 5 nm thick, showed no Y silicide but a very small incorporation of Si into the Y2O3 films at the interface.

引用

页数：3

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