Conduction and valence band positions of Ta2O5, TaON, and Ta3N5 by UPS and electrochemical methods

被引:900
|
作者
Chun, WJ
Ishikawa, A
Fujisawa, H
Takata, T
Kondo, JN
Hara, M
Kawai, M
Matsumoto, Y
Domen, K
机构
[1] Tokyo Inst Technol, Chem Resources Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[2] Hokkaido Univ, Catalysis Res Ctr, Sapporo, Hokkaido 0600811, Japan
[3] Inst Phys & Chem Res, Surface Chem Lab, Wako, Saitama 3510198, Japan
[4] Kumamoto Univ, Fac Engn, Dept Appl Chem, Kumamoto 8600862, Japan
[5] Japan Sci & Technol Co, CREST, Tokyo, Japan
关键词
D O I
10.1021/jp027593f
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The conduction and valence band edges for electronic band gaps and Fermi levels are determined for Ta2O5, TaON, and Ta3N5 by ultraviolet photoelectron spectroscopy (UPS) and electrochemical analyses. Reasonable agreement between the results of the two methods is obtained at the pH at which the zeta potentials of the particles are zero. The tops of the valence bands are found to be shifted to higher potential energies on the order Ta2O5 < TaON < Ta3N5, whereas the bottoms of the conduction bands are very similar in the range -0.3 to -0.5 V (vs NHE at pH = 0). From the results, it is concluded that TaON and Ta3N5 are promixing catalysts for the reduction and oxidation of water using visible light in the ranges lambda < 520 nm and λ < 600 nm, respectively. It is also demonstrated that the proposed UPS technique is a reliable alternative to electrochemical analyses for determining the absolute band gap positions for materials in aqueous solutions that would otherwise be difficult to measure using electrochemical methods.
引用
收藏
页码:1798 / 1803
页数:6
相关论文
共 50 条
  • [31] Permittivity Enhancement of Ta2O5/Co/Ta2O5 Trilayer Films
    Ding, Y.
    Yao, Y. D.
    Wu, K. T.
    Hsu, J. C.
    Hung, D. S.
    Wei, D. H.
    Lin, Y. H.
    IEEE TRANSACTIONS ON MAGNETICS, 2011, 47 (03) : 710 - 713
  • [32] Roles of TaON and Ta3N5 in the visible-Fenton-like degradation of atrazine
    Du, Yingxun
    Zhao, Lu
    Zhang, Yuanyuan
    JOURNAL OF HAZARDOUS MATERIALS, 2014, 267 : 55 - 61
  • [33] Electrochemical behavior of thin Ta3N5 semiconductor film
    Ishikawa, A
    Takata, T
    Kondo, JN
    Hara, M
    Domen, K
    JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (30) : 11049 - 11053
  • [34] Electrochemical behaviour of platinum-coated Ta/Ta2O5 electrodes
    Mahé, E
    Devilliers, D
    Groult, H
    Pouilleau, J
    ELECTROCHIMICA ACTA, 1999, 44 (13) : 2307 - 2315
  • [35] Vaporization of Ta2O5
    Kazenas, E.K.
    Petrov, A.A.
    Samojlova, I.O.
    1600,
  • [36] Evaporation of Ta2O5
    Phys Lett Sect B Nucl Elem Part High Energy Phys, (16):
  • [37] EVAPORATION OF TA2O5
    KAZENAS, EK
    PETROV, AA
    SAMOILOVA, IO
    RUSSIAN METALLURGY, 1994, (05): : 16 - 19
  • [38] From Ta2S5 Wires to Ta2O5 and Ta2O5-xSx
    Benjamin, Shermane M.
    Rieders, Nathaniel F.
    Smith, Michael G.
    Neumeier, John J.
    ACS OMEGA, 2021, 6 (08): : 5445 - 5450
  • [39] ROLE OF DEFECTS ON DC CONDUCTION IN TA2O5 FILMS
    YOUNG, PL
    JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) : 987 - 990
  • [40] The comparison between Ta2O5 and Ti-doped Ta2O5 dielectrics
    Kao, Chyuan Haur
    Lai, Pei Lun
    Wang, Hsin Yuan
    SURFACE & COATINGS TECHNOLOGY, 2013, 231 : 512 - 516