Synthesis of p-type ZnO films

被引：468

作者：

Ryu, YR ^{[1
]}

Zhu, S

Look, DC

Wrobel, JM

Jeong, HM

White, HW

机构：

[1] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA

[2] Wright State Univ, Res Ctr, Dayton, OH 45435 USA

[3] Univ Missouri, Dept Phys, Kansas City, MO 64110 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 216卷 / 1-4期

关键词：

p-Type ZnO films; arsenic dopant; synthesis by PLD;

D O I：

10.1016/S0022-0248(00)00437-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

p-Type ZnO obtained by arsenic (As) doping is reported for the first time. Arsenic-doped ZnO (ZnO:As) films have been deposited on (0 0 1)-GaAs substrates by pulsed laser ablation. The process of synthesizing p-type ZnO:As films was performed in an ambient gas of ultra-pure (99.999 %) oxygen. The ambient gas pressure was 35 mTorr with the substrate temperature in the range 300-450 degrees C. ZnO films grown at 400 degrees C and 450 degrees C are p-type and As is a good acceptor. The acceptor peak is located at 3.32 eV and its binding energy is about 100 meV. Acceptor concentrations of As atoms in ZnO films were in the range from high 10(17) to high 10(21) atoms/cm(3) as determined by secondary ion mass spectroscopy (SIMS) and Hall effect measurements. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：330 / 334

页数：5

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