Structural and magnetoelectric properties of Ga2-xFexO3 single crystals grown by a floating-zone method

被引:243
作者
Arima, T
Higashiyama, D
Kaneko, Y
He, JP
Goto, T
Miyasaka, S
Kimura, T
Oikawa, K
Kamiyama, T
Kumai, R
Tokura, Y
机构
[1] Japan Sci & Technol Agcy, ERATO, AIST Tsukuba Cent 4, Spin Superstruct Project, Tsukuba, Ibaraki 3058562, Japan
[2] Univ Tsukuba, Inst Mat Sci, Tsukuba, Ibaraki 3058573, Japan
[3] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
[4] High Energy Accelerator Res Org, Inst Mat Struct Sci, Neutron Sci Lab, Tsukuba, Ibaraki 3050801, Japan
[5] Natl Inst Adv Ind Sci & Technol, Correlated Electron Res Ctr, Tsukuba, Ibaraki 3058562, Japan
关键词
D O I
10.1103/PhysRevB.70.064426
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Lattice-structural, magnetic, and magnetoelectric (ME) properties have been investigated for single crystals of prototypical polar ferrimagnet Ga2-xFexO3 (0.8less than or equal toxless than or equal to1.4) as melt-grown by a floating-zone (FZ) method. Magnetization measurements show that the saturated magnetization as well as the ferrimagnetic phase transition temperature (T-C) increases with as increase of Fe content x, while the coercive force decreases. A neutron powder diffraction study indicates fairly low ordering of Ga and Fe arrangement at cation sites, which is likely related to the lower T-C in the FZ crystals than in the corresponding flux-grown crystals. Coefficients of linear and quadratic ME effects have been obtained with measurements of change in electric polarization induced by sweeping a magnetic field. Electric polarization was largely modulated in a magnetic field applied parallel to the direction of spontaneous magnetization, but not in a field parallel to that of the spontaneous polarization. A simple model to explain the sharp contrast is presented.
引用
收藏
页码:064426 / 1
页数:8
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