Development of n+ -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results

被引：36

作者：

Unno, Y. ^{[9
]}

Edwards, S. O. ^{[1
]}

Pyatt, S. ^{[1
]}

Thomas, J. P. ^{[1
]}

Wilson, J. A. ^{[1
]}

Kierstead, J. ^{[2
,3
]}

Lynn, D. ^{[2
,3
]}

Carter, J. R. ^{[4
]}

Hommels, L. B. A. ^{[4
]}

Robinson, D. ^{[4
]}

Bloch, I. ^{[13
,14
]}

Gregor, I. M. ^{[13
,14
]}

Tackmann, K. ^{[13
,14
]}

Betancourt, C. ^{[5
]}

Jakobs, K. ^{[5
]}

Kuehn, S. ^{[5
]}

Mori, R. ^{[5
]}

Parzefall, U. ^{[5
]}

Wiik-Fucks, L. ^{[5
]}

Clark, A. ^{[6
]}

Ferrere, D. ^{[6
]}

Sevilla, S. Gonzalez ^{[6
]}

Ashby, J. ^{[7
]}

Blue, A. ^{[7
]}

Bates, R. ^{[7
]}

Buttar, C. ^{[7
]}

Doherty, F. ^{[7
]}

Eklund, L. ^{[7
]}

McMullen, T. ^{[7
]}

McEwan, F. ^{[7
]}

O'Shea, V. ^{[7
]}

Kamada, S. ^{[8
]}

Yamamura, K. ^{[8
]}

Ikegami, Y. ^{[9
]}

Nakamura, K. ^{[9
]}

Takubo, Y. ^{[9
]}

Nishimura, R. ^{[10
]}

Takashima, R. ^{[10
]}

Chilingarov, A. ^{[11
]}

Fox, H. ^{[11
]}

Affolder, A. A. ^{[12
]}

Allport, P. P. ^{[12
]}

Casse, G. ^{[12
]}

Dervan, P. ^{[12
]}

Forshaw, D. ^{[12
]}

Greenall, A. ^{[12
]}

Wonsak, S. ^{[12
]}

Wormald, M. ^{[12
]}

Cindro, V. ^{[13
,14
]}

Kramberger, G. ^{[13
,14
]}

机构：

[1] Univ Birmingham, Sch Phys & Astron, Birmingham B15 2TT, W Midlands, England

[2] Brookhaven Natl Lab, Dept Phys, Upton, NY 11973 USA

[3] Brookhaven Natl Lab, Instrumentat Div, Upton, NY 11973 USA

[4] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[5] Univ Freiburg, Inst Phys, D-79104 Freiburg, Germany

[6] Univ Geneva, DPNC, CH-1211 Geneva 4, Switzerland

[7] Univ Glasgow, SUPA Sch Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland

[8] Hamamatsu Photon KK, Div Solid State, Higashi Ku, Hamamatsu, Shizuoka 4358558, Japan

[9] KEK, Inst Particle & Nucl Study, Oho 1-1, Tsukuba, Ibaraki 3050801, Japan

[10] Kyoto Univ Educ, Dept Sci Educ, Kyoto 6128522, Japan

[11] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[12] Univ Liverpool, Dept Phys, Oliver Lodge Lab, Liverpool L69 7ZE, Merseyside, England

[13] Univ Ljubljana, Jozef Stefan Inst, Ljubljana, Slovenia

[14] Univ Ljubljana, Dept Phys, Ljubljana 61000, Slovenia

[15] Univ New Mexico, Dept Phys & Astron, Albuquerque, NM 87131 USA

[16] Nikhef, NL-10980 XG Amsterdam, Netherlands

[17] Osaka Univ, Dept Phys, Toyonaka, Osaka 5600043, Japan

[18] Charles Univ Prague, Fac Math & Phys, Prague 8, Czech Republic

[19] Acad Sci Czech Republ, Inst Phys, Prague 18221 8, Czech Republic

[20] Queen Mary Univ London, Sch Phys & Astron, London E1 4NS, England

[21] Univ Calif Santa Cruz, SCIPP, Santa Cruz, CA 95064 USA

[22] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[23] Tokyo Inst Technol, Inst Sci & Engn, Meguro Ku, Tokyo 1528551, Japan

[24] Univ Tsukuba, Inst Pure & Appl Sci, Tsukuba, Ibaraki 3059751, Japan

[25] IFIC Ctr Mixto CSIC UVEG, Valencia 46071, Spain

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2014年 / 765卷

基金：

英国科学技术设施理事会; 美国能源部; 瑞士国家科学基金会;

关键词：

Silicon strip; n(+)-in-p; P-type; Radiation-tolerant; HL-LHC; PTP; SLIM-EDGE; BULK; IRRADIATION; TECHNOLOGY; DETECTORS;

D O I：

10.1016/j.nima.2014.06.086

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have been developing a novel radiation tolerant n(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float zone wafers, where large area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 pm and slim edge space of 450 pm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：80 / 90

页数：11

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