New Method of Measurements Transient Thermal Impedance and Radial Power of Power LEDs

被引:36
作者
Gorecki, Krzysztof [1 ]
Ptak, Przemyslaw [1 ]
机构
[1] Gdynia Maritime Univ, Dept Marine Elect, PL-81225 Gdynia, Poland
关键词
Light emitting diodes; Temperature measurement; Power measurement; Current measurement; Semiconductor device measurement; Voltage measurement; Impedance; Lighting power; measurement methods; power LEDs; self-heating; transient thermal impedance; RESISTANCE; MODELS; DEVICES;
D O I
10.1109/TIM.2019.2894043
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a new method of measuring transient thermal impedance of power LEDs and radial power is proposed. The idea of the method is described, and the measurement setup realizing this method is presented. The measurement error of the proposed method is analyzed, and some results of measurements realized with the use of the proposed method are presented and discussed. Selected results of measurements are compared with the measurements results realized with other methods described in the literature.
引用
收藏
页码:212 / 220
页数:9
相关论文
共 42 条
[1]  
[Anonymous], 2012, JESD5151 JEDEC
[2]   Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters-A Review [J].
Avenas, Yvan ;
Dupont, Laurent ;
Khatir, Zoubir .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2012, 27 (06) :3081-3092
[3]   Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices thermal characterization - Part I: Fundamentals and theory [J].
Bagnoli, PE ;
Casarosa, C ;
Ciampi, M ;
Dallago, E .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 1998, 13 (06) :1208-1219
[4]   EXAMINATIONS OF SELECTED THERMAL PROPERTIES OF PACKAGES OF SiC SCHOTTKY DIODES [J].
Bisewski, Damian ;
Mysliwiec, Marcin ;
Gorecki, Krzysztof ;
Kisiel, Ryszard ;
Zarebski, Janusz .
METROLOGY AND MEASUREMENT SYSTEMS, 2016, 23 (03) :451-459
[5]   Temperature measurements of semiconductor devices - A review [J].
Blackburn, DL .
TWENTIETH ANNUAL IEEE SEMICONDUCTOR THERMAL MEASUREMENT AND MANAGEMENT SYMPOSIUM, PROCEEDINGS 2004, 2004, :70-80
[6]   Light emitting diodes reliability review [J].
Chang, Moon-Hwan ;
Das, Diganta ;
Varde, P. V. ;
Pecht, Michael .
MICROELECTRONICS RELIABILITY, 2012, 52 (05) :762-782
[7]   A critical review of thermal models for electro-thermal simulation [J].
d'Alessandro, V ;
Rinaldi, N .
SOLID-STATE ELECTRONICS, 2002, 46 (04) :487-496
[8]   Study on the methods to measure the junction-to-case thermal resistance of IGBT modules and press pack IGBTs [J].
Deng, Erping ;
Zhao, Zhibin ;
Zhang, Peng ;
Li, Jinyuan ;
Huang, Yongzhang .
MICROELECTRONICS RELIABILITY, 2017, 79 :248-256
[9]   Comparison of Junction Temperature Evaluations in a Power IGBT Module Using an IR Camera and Three Thermosensitive Electrical Parameters [J].
Dupont, Laurent ;
Avenas, Yvan ;
Jeannin, Pierre-Olivier .
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2013, 49 (04) :1599-1608
[10]  
Farkas G., 2018, P 24 INT WORKSH THER, P1