Near-infrared light-emitting diodes based on Tm-doped Ga2O3

被引：11

作者：

Chen, Zewei ^{[1
]}

Saito, Katsuhiko ^{[1
]}

Tanaka, Tooru ^{[1
]}

Guo, Qixin ^{[1
]}

机构：

[1] Saga Univ, Synchrotron Light Applicat Ctr, Dept Elect & Elect Engn, Saga 8408502, Japan

来源：

JOURNAL OF LUMINESCENCE | 2022年 / 245卷

关键词：

Near-infrared; Light-emitting diodes; Tm-Ga2O3; EMISSION; ELECTROLUMINESCENCE; LUMINESCENCE; ENERGY; SINGLE;

D O I：

10.1016/j.jlumin.2022.118773

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Near-infrared (NIR) light-emitting diodes (LEDs) based on Tm-Ga2O3/GaAs were fabricated by pulsed laser deposition. The strongest NIR emission observed at 794 nm can be assigned to the 3H4-3H6 transition. The major blue emission detected at 476 nm can be attributed to the 1G4 -3H6 transition. The turn-on voltage of 794 nm emission is 5.5 V lower than 6.9 V for 476 nm emission. The ratio of the 794 to 476 nm emission intensities of Tm-Ga2O3/GaAs LEDs is close to a constant of 11.4. These results open a pathway for Ga(2)O(3)based LEDs used in NIR application.

引用

页数：5

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