Recent progress and futuristic development of PbSe thermoelectric materials and devices

被引:62
作者
Gayner, Chhatrasal [1 ,3 ]
Kar, Kamal K. [1 ,2 ]
Kim, Woochul [3 ]
机构
[1] Indian Inst Technol Kanpur, Mat Sci Programme, Adv Nanoengn Mat Lab, Kanpur 208016, Uttar Pradesh, India
[2] Indian Inst Technol Kanpur, Adv Nanoengn Mat Lab, Dept Mech Engn, Kanpur 208016, Uttar Pradesh, India
[3] Yonsei Univ, Sch Mech Engn, Seoul, South Korea
关键词
Thermoelectrics; Semiconductor; PbSe; Electrical and thermal transport; FIGURE-OF-MERIT; PERFORMANCE BULK THERMOELECTRICS; THERMAL TRANSPORT-PROPERTIES; P-TYPE PBSE; POWER-GENERATION; SOLID-SOLUTION; ENHANCEMENT; PBTE; BANDS; CHALCOGENIDES;
D O I
10.1016/j.mtener.2018.06.010
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Exploring highly efficient thermoelectric materials to address energy generation is the current area of interest. Fundamentals of materials science, the behavior of materials, strategies, designing the structural/microstructural architects are studied so far in a wide range of material. However, due to the scarcity of Te/Ge in the earth crust, development of alternative materials with improved thermoelectric performance is required to make a highly efficient thermoelectric device for the large-scale applications. The developments are pointing the efficient performance of PbSe, and have been overcome the problem arises to obtain both n and p-type legs from a single material. Therefore, it must be important to place all current developments in the form of solid review. This review updates recent advances in high-performance bulk PbSe. The renaissance has been attained through doping, nanostructuring, engineering of band structure, microstructural architects and atomic arrangements via vacancy/dislocation ornaments. The structure-property relationship, the influence of doping, dislocations at atomic scales, and carriers/phonons transport are discussed to understand the exciting material's physics. Further possible device level abilities are also discussed for the futuristic developments. (C) 2018 Elsevier Ltd. All rights reserved.
引用
收藏
页码:359 / 376
页数:18
相关论文
共 115 条
[1]   Boosting thermoelectric performance of p-type SiGe alloys through in-situ metallic YSi2 nanoinclusions [J].
Ahmad, Sajid ;
Singh, Ajay ;
Bohra, Anil ;
Basu, Ranita ;
Bhattacharya, Shovit ;
Bhatt, Ranu ;
Meshram, K. N. ;
Roy, Mainak ;
Sarkar, Shaibal K. ;
Hayakawa, Y. ;
Debnath, A. K. ;
Aswal, D. K. ;
Gupta, S. K. .
NANO ENERGY, 2016, 27 :282-297
[2]   Ab initio studies of the electronic structure of defects in PbTe [J].
Ahmad, Salameh ;
Mahanti, S. D. ;
Hoang, Khang ;
Kanatzidis, M. G. .
PHYSICAL REVIEW B, 2006, 74 (15)
[3]   Development of low resistance electrical contacts for thermoelectric devices based on n-type PbTe and p-type TAGS-85 ((AgSbTe2)0.15(GeTe)0.85) [J].
Singh, Ajay ;
Bhattacharya, S. ;
Thinaharan, C. ;
Aswal, D. K. ;
Gupta, S. K. ;
Yakhmi, J. V. ;
Bhanumurthy, K. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (01)
[4]   High-temperature charge and thermal transport properties of the n-type thermoelectric material PbSe [J].
Androulakis, John ;
Chung, Duck-Young ;
Su, Xianli ;
Zhang, Li ;
Uher, Ctirad ;
Hasapis, Thomas C. ;
Hatzikraniotis, Euripides ;
Paraskevopoulos, Konstantinos M. ;
Kanatzidis, Mercouri G. .
PHYSICAL REVIEW B, 2011, 84 (15)
[5]   Thermoelectrics from Abundant Chemical Elements: High-Performance Nanostructured PbSe-PbS [J].
Androulakis, John ;
Todorov, Iliya ;
He, Jiaqing ;
Chung, Duck-Young ;
Dravid, Vinayak ;
Kanatzidis, Mercouri .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2011, 133 (28) :10920-10927
[6]   High-temperature thermoelectric properties of n-type PbSe doped with Ga, In, and Pb [J].
Androulakis, John ;
Lee, Yeseul ;
Todorov, Iliya ;
Chung, Duck-Young ;
Kanatzidis, Mercouri .
PHYSICAL REVIEW B, 2011, 83 (19)
[7]   Improvement of Electrical Contact Between TE Material and Ni Electrode Interfaces by Application of a Buffer Layer [J].
Arai, Koya ;
Matsubara, Masanori ;
Sawada, Yukie ;
Sakamoto, Tatsuya ;
Kineri, Tohru ;
Kogo, Yasuo ;
Iida, Tsutomu ;
Nishio, Keishi .
JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (06) :1771-1777
[8]   Titanium Disilicide as High-Temperature Contact Material for Thermoelectric Generators [J].
Assion, F. ;
Schoenhoff, M. ;
Hilleringmann, U. .
JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (07) :1932-1935
[9]   Key issues in development of thermoelectric power generators: High figure-of-merit materials and their highly conducting interfaces with metallic interconnects [J].
Aswal, Dinesh K. ;
Basu, Ranita ;
Singh, Ajay .
ENERGY CONVERSION AND MANAGEMENT, 2016, 114 :50-67
[10]   Improved thermoelectric performance of hot pressed nanostructured n-type SiGe bulk alloys [J].
Basu, Ranita ;
Bhattacharya, Shovit ;
Bhatt, Ranu ;
Roy, Mainak ;
Ahmad, Sajid ;
Singh, Ajay ;
Navaneethan, M. ;
Hayakawa, Y. ;
Aswal, D. K. ;
Gupta, S. K. .
JOURNAL OF MATERIALS CHEMISTRY A, 2014, 2 (19) :6922-6930