Influence of annealing on ZnO films grown by metal-organic chemical vapor deposition

被引：28
|
作者：
Li, HX
Liu, H [1 ]
Wang, JY
Yao, SS
Cheng, XF
Boughton, RI
机构：
[1] Shandong Univ, State Key Lab Crystal Growth Mat, Jinan 250100, Peoples R China
[2] Bowling Green State Univ, Dept Phys & Astron, Bowling Green, OH 43403 USA
来源：
MATERIALS LETTERS | 2004年 / 58卷 / 27-28期
关键词：
atomic force microscopy; chemical vapor deposition; surfaces; heat treatment;
D O I：
10.1016/j.matlet.2004.07.014
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Zinc oxide (ZnO) films were deposited on silica glass substrates using metal-organic chemical vapor deposition (MOCVD) with diethyl zinc (DEZn) as the Zn precursor and ethanol as the oxygen source. Annealing was performed at 600 degreesC for 1 h in air. The X-ray diffraction (XRD) patterns of the samples show sharp diffraction peaks for ZnO (0002), which indicates that the films are highly c-axis oriented. The films were also characterized by measuring the optical transmission spectrum, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The XPS spectra showed that the ZnO films changed from O-rich to Zn-rich after being annealed. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：3630 / 3633
页数：4
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