Polarity inversion in aluminum nitride thin films under high sputtering power

被引：32
作者：
Akiyama, Morito
Kamohara, Toshihiro
Ueno, Naohiro
Sakamoto, Michiru
Kano, Kazuhiko
Teshigahara, Akihiko
Kawahara, Nobuaki
机构：
[1] Natl Inst Adv Ind Sci & Technol, Onsite Sensing & Diag Res Lab, Tosu, Saga 8410052, Japan
[2] DENSO Corp, Res Labs, Nisshin, Aichi 4700111, Japan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 15期
关键词：
D O I：
10.1063/1.2721865
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors have investigated the influence of sputtering power on the piezoelectric response of aluminum nitride (AlN) thin films prepared on titanium nitride bottom electrodes. The piezoelectric response strongly depends on the sputtering power. The polar inversion was found by piezoresponse force microscopy. The polarity gradually changes from the N polarity to Al polarity with increasing sputtering power. The piezoelectric response of the films changes from -2.7 to +4.3 pC/N with increasing sputtering power from 100 to 500 W. Furthermore, the polarity inversion from the N polarity to Al polarity is observed by increasing sputtering power during growth. (c) 2007 American Institute of Physics.
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