FARADAY EFFECT DUE TO PAULI EXCLUSION PRINCIPLE IN 3D TOPOLOGICAL INSULATOR NANOSTRUCTURES

被引：0

作者：

Paudel, Hari P. ^{[1
]}

Leuenberger, Michael N. ^{[1
]}

机构：

[1] Univ Cent Florida, NanoSci Technol Ctr, Orlando, FL 32826 USA

来源：

QUANTUM INFORMATION AND COMPUTATION XII | 2014年 / 9123卷

关键词：

Topological insulators; Quantum memory; Weyl fermions; SPIN; GAP;

D O I：

10.1117/12.2050942

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

3D topological insulator (3D TI) materials have interesting surface states that are protected against scattering due to non-magnetic impurities. They turn out to be useful in quantum information processing. Here, using the 3D Dirac equation, we show that the transitions between positive and negative energy solutions in a 3D TI heterostructure junction and in a 3D TI quantum dot (QD) obey strict optical selection rules. We calculate the optical conductivity tensor of a 3D TI double interface made of a PbTe/Pb0.31Sn0.69Te/PbTe heterostructure using Maxwell's equations, which reveals a giant Faraday rotation effect due to Pauli exclusion principle. A transfer matrix method is employed to calculate the transmittance in a multilayer stacking of PbTe/Pb0.31Sn0.69Te/PbTe heterostructure. We show that a stack of large number of interfaces is required to absorb completely the incoming photons. We also present a model of a QD consisting of a spherical core-bulk heterostructure made of 3D TI materials, such as PbTe/Pb0.31Sn0.69Te, with bound massless and helical Weyl states existing at the interface and being confined in all three dimensions. We calculate the Faraday rotation effect coming from the polarization of single electron-hole pairs. We show that the semi-classical Faraday effect can be used to read out spin quantum memory.

引用

页数：17

共 27 条

[1] INTERFACE STATES IN BAND-INVERTED SEMICONDUCTOR HETEROJUNCTIONS [J].

AGASSI, D ;

KORENMAN, V .

PHYSICAL REVIEW B, 1988, 37 (17) :10095-10106

[2] Nondestructive optical measurements of a single electron spin in a quantum dot [J].

Berezovsky, J. ;

Mikkelsen, M. H. ;

Gywat, O. ;

Stoltz, N. G. ;

Coldren, L. A. ;

Awschalom, D. D. .

SCIENCE, 2006, 314 (5807) :1916-1920

[3] PbTe/PbSnTe heterostructures as analogs of topological insulators [J].

Buczko, Ryszard ;

Cywinski, Lukasz .

PHYSICAL REVIEW B, 2012, 85 (20)

[4]

BYCHKOV YA, 1984, JETP LETT+, V39, P78

[5] Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3 [J].

Chen, Y. L. ;

Analytis, J. G. ;

Chu, J. -H. ;

Liu, Z. K. ;

Mo, S. -K. ;

Qi, X. L. ;

Zhang, H. J. ;

Lu, D. H. ;

Dai, X. ;

Fang, Z. ;

Zhang, S. C. ;

Fisher, I. R. ;

Hussain, Z. ;

Shen, Z. -X. .

SCIENCE, 2009, 325 (5937) :178-181

[6] BAND STRUCTURE AND LASER ACTION IN PBXSN1-XTE [J].

DIMMOCK, JO ;

MELNGAIL.I ;

STRAUSS, AJ .

PHYSICAL REVIEW LETTERS, 1966, 16 (26) :1193-&

[7] Topological insulators with inversion symmetry [J].

Fu, Liang ;

Kane, C. L. .

PHYSICAL REVIEW B, 2007, 76 (04)

[8] Ultrafast Surface Carrier Dynamics in the Topological Insulator Bi2Te3 [J].

Hajlaoui, M. ;

Papalazarou, E. ;

Mauchain, J. ;

Lantz, G. ;

Moisan, N. ;

Boschetto, D. ;

Jiang, Z. ;

Miotkowski, I. ;

Chen, Y. P. ;

Taleb-Ibrahimi, A. ;

Perfetti, L. ;

Marsi, M. .

NANO LETTERS, 2012, 12 (07) :3532-3536

[9] Colloquium: Topological insulators [J].

Hasan, M. Z. ;

Kane, C. L. .

REVIEWS OF MODERN PHYSICS, 2010, 82 (04) :3045-3067

[10] Observation of Unconventional Quantum Spin Textures in Topological Insulators [J].

Hsieh, D. ;

Xia, Y. ;

Wray, L. ;

Qian, D. ;

Pal, A. ;

Dil, J. H. ;

Osterwalder, J. ;

Meier, F. ;

Bihlmayer, G. ;

Kane, C. L. ;

Hor, Y. S. ;

Cava, R. J. ;

Hasan, M. Z. .

SCIENCE, 2009, 323 (5916) :919-922

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