Surface defects in semiconductor lasers studied with cross-sectional scanning tunneling microscopy

被引：2

作者：

Cobley, R. J. ^{[1
]}

Teng, K. S. ^{[1
]}

Brown, M. R. ^{[1
]}

Rees, P. ^{[1
]}

Wilks, S. P. ^{[1
]}

机构：

[1] Sch Engn, Multidisciplinary Nanotechnol Ctr, Swansea SA2 8PP, W Glam, Wales

来源：

APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 19期

基金：

英国工程与自然科学研究理事会;

关键词：

Scanning tunneling microscopy (STM); Semiconductor laser; Passivation; AlGaAs; InP; PASSIVATION; SPECTROSCOPY; DIAMOND;

D O I：

10.1016/j.apsusc.2010.03.089

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Cross-sectional scanning tunneling microscopy is used to study defects on the surface of semiconductor laser devices. Step defects across the active region caused by the cleave process are identified. Curved blocking layers used in buried heterostructure lasers are shown to induce strain in the layers above them. Devices are also studied whilst powered to look at how the devices change during operation, with a numerical model that confirms the observed behavior. Whilst powered, low-doped blocking layers adjacent to the active region are found to change in real time, with dopant diffusion and the formation of surface states. A tunneling model which allows the inclusion of surface states and tip-induced band bending is applied to analyze the effects on the tunneling current, confirming that the doping concentration is reducing and defect surface states are being formed. (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：5736 / 5739

页数：4

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