MOCVD Growth of GeTe/Sb2Te3 Core-Shell Nanowires

被引：6

作者：

Kumar, Arun ^{[1
]}

Cecchini, Raimondo ^{[1
,2
]}

Wiemer, Claudia ^{[1
]}

Mussi, Valentina ^{[3
]}

De Simone, Sara ^{[3
]}

Calarco, Raffaella ^{[3
]}

Scuderi, Mario ^{[4
]}

Nicotra, Giuseppe ^{[4
]}

Longo, Massimo ^{[1
,3
]}

机构：

[1] CNR, Inst Microelect & Microsyst, Via C Olivetti 2, I-20864 Agrate Brianza, Italy

[2] CNR, Inst Microelect & Microsyst, Via Gobetti 101, I-40129 Bologna, Italy

[3] CNR, Inst Microelect & Microsyst, Via Fosso Cavaliere 100, I-00133 Rome, Italy

[4] CNR, Inst Microelect & Microsyst, Str VIII,5, I-95121 Catania, Italy

来源：

COATINGS | 2021年 / 11卷 / 06期

关键词：

metalorganic chemical vapor deposition (MOCVD); nanowires; core-shell; GeTe; Sb2Te3; THIN-FILMS; PHASE; NONVOLATILE; GETE;

D O I：

10.3390/coatings11060718

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the self-assembly of core-shell GeTe/Sb2Te3 nanowires (NWs) on Si (100), and SiO2/Si substrates by metalorganic chemical vapour deposition, coupled to the vapour-liquid-solid mechanism, catalyzed by Au nanoparticles. Scanning electron microscopy, X-ray diffraction, micro-Raman mapping, high-resolution transmission electron microscopy, and electron energy loss spectroscopy were employed to investigate the morphology, structure, and composition of the obtained core and core-shell NWs. A single crystalline GeTe core and a polycrystalline Sb2Te3 shell formed the NWs, having core and core-shell diameters in the range of 50-130 nm and an average length up to 7 mu m.

引用

页数：9

共 45 条

[1] Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials
Andrikopoulos, K. S.
Yannopoulos, S. N.
Kolobov, A. V.
Fons, P.
Tominaga, J.
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2007, 68 (5-6) : 1074 - 1078
[2] [Anonymous], 2021, Inorganic Crystal Structure Data Base
[3] [Anonymous], 2021, INORGANIC CRYSTAL ST
[4] One-dimensional steeplechase for electrons realized
Björk, MT
Ohlsson, BJ
Sass, T
Persson, AI
Thelander, C
Magnusson, MH
Deppert, K
Wallenberg, LR
Samuelson, L
[J]. NANO LETTERS, 2002, 2 (02) : 87 - 89
[5] Interplay between Structural and Thermoelectric Properties in Epitaxial Sb2+xTe3 Alloys
Cecchi, Stefano
Dragoni, Daniele
Kriegner, Dominik
Tisbi, Elisa
Zallo, Eugenio
Arciprete, Fabrizio
Holy, Voclav
Bernasconi, Marco
Calarco, Raffaella
[J]. ADVANCED FUNCTIONAL MATERIALS, 2019, 29 (02)
[6] In-doped Sb nanowires grown by MOCVD for high speed phase change memories
Cecchini, R.
Selmo, S.
Wiemer, C.
Fanciulli, M.
Rotunno, E.
Lazzarini, L.
Rigato, M.
Pogany, D.
Lugstein, A.
Longo, M.
[J]. MICRO AND NANO ENGINEERING, 2019, 2 : 117 - 121
[7] Weak Antilocalization in Granular Sb2Te3 Thin Films Deposited by MOCVD
Cecchini, Raimondo
Mantovan, Roberto
Wiemer, Claudia
Nasi, Lucia
Lazzarini, Laura
Longo, Massimo
[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2018, 12 (08):
[8] Crystalline amorphous semiconductor superlattice
Chong, T. C.
Shi, L. P.
Wei, X. Q.
Zhao, R.
Lee, H. K.
Yang, P.
Du, A. Y.
[J]. PHYSICAL REVIEW LETTERS, 2008, 100 (13)
[9] Si/a-Si core/shell nanowires as nonvolatile crossbar switches
Dong, Yajie
Yu, Guihua
McAlpine, Michael C.
Lu, Wei
Lieber, Charles M.
[J]. NANO LETTERS, 2008, 8 (02) : 386 - 391
[10] Chalcogenide photonics
Eggleton, Benjamin J.
Luther-Davies, Barry
Richardson, Kathleen
[J]. NATURE PHOTONICS, 2011, 5 (03) : 141 - 148

← 1 2 3 4 5 →