Transferable, flexible white light-emitting diodes of GaN p-n junction microcrystals fabricated by remote epitaxy

被引：34

作者：

Jeong, Junseok ^{[1
]}

Jin, Dae Kwon ^{[1
]}

Choi, Joonghoon ^{[1
]}

Jang, Junho ^{[2
]}

Kang, Bong Kyun ^{[3
]}

Wang, Qingxiao ^{[4
]}

Park, Won Il ^{[5
]}

Jeong, Mun Seok ^{[6
]}

Bae, Byeong-Soo ^{[2
]}

Yang, Woo Seok ^{[3
]}

Kim, Moon J. ^{[4
]}

Hong, Young Joon ^{[1
]}

机构：

[1] Sejong Univ, Dept Nanotechnol & Adv Mat Engn, GRI TPC Int Res Ctr, Seoul 05006, South Korea

[2] Korea Adv Inst Sci & Technol KAIST, Dept Mat Sci & Engn, Wearable Platform Mat Technol Ctr WMC, Daejeon 34141, South Korea

[3] Korea Elect Technol Inst KETI, Nano Mat Res Ctr, Seongnam 13509, Gyeonggi Do, South Korea

[4] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[5] Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea

[6] Hanyang Univ, Dept Energy Engn, Dept Phys, Seoul 04763, South Korea

来源：

NANO ENERGY | 2021年 / 86卷

基金：

新加坡国家研究基金会;

关键词：

Remote epitaxy; GaN; p-n junction; White light emitting diode; Flexible device; Transfer; HETEROGENEOUS INTEGRATION; GRAPHENE; NANOWIRE; GROWTH;

D O I：

10.1016/j.nanoen.2021.106075

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The remote epitaxy of GaN p-n homojunction microcrystals (mu Cs) is demonstrated for fabricating transferable, flexible white light-emitting diodes (WLEDs). The GaN p-n junction mu Cs are randomly grown on graphene-coated Al2O3(0001), which are then delaminated for mass-transfer onto conducting copper tape. The mu Cs-LED shows electrical rectification and white electroluminescence (EL) emission. The mu Cs-WLED exhibits reliable LED performances after repetitive bending deformations and cycling temperature environments. Based on the transferability, the mu Cs-WLEDs are patterned and assembled to matrix arrays, which exhibit homogeneous, reliable performances even at a bent form. We discuss that the origin of white EL emission is mixing of blue and yellow-red EL emissions from p-GaN and n-GaN sides, respectively, based on photoluminescence spectroscopic measurements. This study opens a way of fabricating the transferable, flexible, and modular light panels through remote epitaxy.

引用

页数：12

共 57 条

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