Growth of silicon-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-flow-rate metal organic vapor phase epitaxy reactor

被引：18

作者：

Ikenaga, Kazutada ^{[1
]}

Mishima, Akira ^{[1
]}

Yano, Yoshiki ^{[1
]}

Tabuchi, Toshiya ^{[1
]}

Matsumoto, Koh ^{[1
]}

机构：

[1] Taiyo Nippon Sanso Corp, Tsukuba, Ibaraki 3002611, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 05期

关键词：

ATMOSPHERIC-PRESSURE MOVPE; LIGHT-EMITTING-DIODES; PARASITIC REACTION; UNIFORM GROWTH; BUFFER LAYERS; GAN; ALGAN; OPERATION; SYSTEM; DEPOSITION;

D O I：

10.7567/JJAP.55.05FE04

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The relationship between the carbon concentration and electrical characteristics of silicon-doped AlGaN (Al > 0.5) was investigated using a high-flow-rate metal organic vapor phase epitaxy (MOVPE) reactor. The carbon concentration and electrical properties of AlGaN (Al > 0.5) were measured as a function of the growth rate, V/III ratio, and growth temperature. The growth rate of Al0.6Ga0.4N was linearly controlled up to 7.2 mu m/h under a constant ammonia (NH3) flow rate. However, a decrease in V/III ratio resulted in an increase in carbon concentration to 8 x 10(17) cm(-3). With increased growth temperature, the carbon concentration decreased to less than 2 x 10(17) cm(-3) without showing any reduction in growth rate. As a result, n-type Al0.6Ga0.4N with a carrier concentration of 5.4 x 10(18) cm(-)3 and a resistivity of 2.2 x 10(-2) Omega.cm was obtained. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

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