Phosphorus emitter engineering by plasma-immersion ion implantation for c-Si solar cells

被引：15

作者：

Michel, Thomas ^{[1
,2
]}

Le Perchec, Jerome ^{[3
]}

Lanteme, Adeline ^{[3
]}

Monna, Remi ^{[3
]}

Torregrosa, Frank ^{[1
]}

Roux, Laurent ^{[1
]}

Commandre, Mireille ^{[2
]}

机构：

[1] IBS, F-13790 Peynier, France

[2] Aix Marseille Univ, CNRS, Ecole Cent Marseille, Fresnel Inst, F-13397 Marseille, France

[3] CEA, LITEN, INES, F-73375 Le Bourget Du Lac, France

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2015年 / 133卷

关键词：

Ion implantation; Plasma-immersion; Crystalline silicon; Solar cell; Photovoltaics; SILICON; EFFICIENCY;

D O I：

10.1016/j.solmat.2014.11.014

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Ion Beam Services (IBS) has developed processes dedicated to silicon-based solar cell manufacturing using a plasma-immersion ion implantation equipment. It enables the realization of various doping profiles for phosphorus-doped emitters which fit the requirements of high-efficiency solar cells. PH3 plasma-implanted emitters are chemically, physically and electrically characterized to demonstrate their excellent quality. Those emitters are then integrated into a low cost p-type monocrystalline silicon solar cell manufacturing line from the National Solar Energy Institute (INES) in order to be compared with usual POCl3 diffusion. Starting from a basic process flow with blanket emitter and conventional full-area aluminum back-surface field, plasma-immersion implanted emitters enable to raise conversion efficiencies above 19.1%. Thanks to an optimized double layer anti-reflective coating, a 19.4% champion cell has been achieved. Depending on different plasma process parameters, lightly doped emitters are then engineered aiming to study doping modulation using a dedicated laser. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：194 / 200

页数：7

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