Formation of InAs wires and dots on vicinal GaAs (110) surfaces with giant steps by molecular beam epitaxy

被引：10

作者：

Torii, S ^{[1
]}

Shim, BR ^{[1
]}

Yasuda, H ^{[1
]}

Maehashi, K ^{[1
]}

Hasegawa, S ^{[1
]}

Nakashima, H ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 567, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 12B期

关键词：

quantum wire; quantum dot; molecular beam epitaxy; gallium arsenide (110); vicinal substrate; indium arsenide; atomic force microscopy; X-ray photoelectron spectroscopy; transmission electron microscopy;

D O I：

10.1143/JJAP.36.L1645

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs are grown on vicinal GaAs (110) surfaces with giant steps using molecular beam epitaxy. Atomic force microscopy, X-ray photoelectron spectroscopy and transmission electron microscopy show that uniform and well-aligned InAs wires and dots are formed on the facets at giant step edges due to the accumulation of InAs. This accumulation is only observed in a relatively high growth temperature range (580-600 degrees C) and not at low temperatures.

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收藏

页码：L1645 / L1647

页数：3

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