Demonstration of Conductivity Modulation in SiC Bipolar Junction Transistors With Reduced Base Spreading Resistance

被引：7

作者：

Asada, Satoshi ^{[1
]}

Suda, Jun ^{[1
]}

Kimoto, Tsunenobu ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 11期

基金：

日本学术振兴会;

关键词：

Bipolar junction transistor (BJT); conductivity modulation; power device; silicon carbide (SiC); SURFACE-RECOMBINATION STRUCTURE; CURRENT-GAIN; 4H-SIC BJTS; BLOCKING CHARACTERISTICS; CHANNEL MOBILITY; SCHOTTKY; MOSFETS; DESIGN; KV; DEVICES;

D O I：

10.1109/TED.2019.2941884

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiC bipolar junction transistors (BJTs) were fabricated based on the design criterion proposed in our previous study, which quantitatively proved the importance of decreasing a base spreading resistance. To reduce the base spreading resistance, Al+-implantation was performed in the parasitic base region. No negative influences due to the implantation damage on the current gain were confirmed when the implantation is performed sufficiently apart from the emitter mesa sidewall, the distance of which is longer than 3 mu m. Since the fabricated BJTs satisfied the design criterion, clear conductivity modulation was achieved, resulting in a reduced collector-resistance, that is, 50% of the unipolar resistance. In addition, we experimentally demonstrated that the conductivity modulation in SiC BJTs could be enhanced by decreasing the base spreading resistance.

引用

页码：4870 / 4874

页数：5

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