Fabrication of integrated double-gated field emission microsource and its electrical characteristics

被引：1
|
作者：
Lee, YJ
Kang, SH
Chun, K
机构：
[1] Seoul Natl Univ, Interuniv Semicond Res Ctr, Gwanak Gu, Seoul 151742, South Korea
[2] Seoul Natl Univ, Sch Elect Engn, Gwanak Gu, Seoul 151742, South Korea
来源：
MICROELECTRONIC ENGINEERING | 1998年 / 42卷
关键词：
D O I：
10.1016/S0167-9317(98)00104-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the fabrication and electrical characteristics of the Integrated Field Emission Microsource (IFEMS) with multiple gates. The molybdenum field emission tip was made by filling cusp-like mold formed when a conformal film was deposited on the hole-trench. Each field emitter has a 1.8 mu m-diameter extraction gate and a 1.4 mu m-diameter focusing gate. To make a path for the emitted electrons, silicon bulk was etched anisotropically in KOH and EDP(Ethylene-Diamine Pyrocatechol) solution successively. The emission characteristics were measured and the influence of the focusing gate has been analyzed.
引用
收藏
页码：449 / 452
页数：4
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