Attacking SRAM PUFs using very-low-temperature data remanence

被引:9
|
作者
Anagnostopoulos, Nikolaos Athanasios [1 ,3 ]
Arul, Tolga [1 ]
Rosenstihl, Markus [2 ]
Schaller, Andre [1 ]
Gabmeyer, Sebastian [1 ]
Katzenbeisser, Stefan [1 ,3 ]
机构
[1] Tech Univ Darmstadt, Dept Comp Sci, Secur Engn Grp, Mornewegstr 32,S4-14, D-64293 Darmstadt, Hessen, Germany
[2] Tech Univ Darmstadt, Dept Phys, Inst Solid State Phys, Hsch Str 6,S2-07, D-64289 Darmstadt, Hessen, Germany
[3] Univ Passau, Fac Comp Sci & Math, Chair Comp Engn, ITZ IH, Innstr 43, D-94032 Passau, Bavaria, Germany
关键词
Physical Unclonable Function (PUF); Static Random Access Memory (SRAM); Data remanence; Data retention; Low temperature; Attack; PHYSICAL UNCLONABLE FUNCTIONS; GENERATE STRONG KEYS; COLD-BOOT ATTACKS; FUZZY EXTRACTORS; BIOMETRICS; DESIGN; LEST;
D O I
10.1016/j.micpro.2019.102864
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In this work, we extend our previous manuscript regarding a systematic study of data remanence effects on an intrinsic Static Random Access Memory Physical Unclonable Function (SRAM PUF) implemented on a Commercial Off-The-Shelf (COTS) device in the temperature range between -110 degrees C and -40 degrees C. As the experimental results of our previous work show, an attack against intrinsic SRAM PUFs, which takes advantage of data remanence effects exhibited due to low temperatures, is possible, resulting in the attacker being able to know the PUF response, with high probability. As demonstrated in our previous work, this attack is highly resistant to memory erasure techniques and can be used to manipulate the cryptographic keys produced by the SRAM PUF. In this work, we examine and discuss potential countermeasures against this attack in more detail, and investigate whether this attack can be performed using an experimental setup that does not guarantee a high degree of thermal isolation. Additionally, we also examine and discuss whether very low temperatures can be used to perform another relevant type of attack against SRAM PUFs, based on whether very low temperature can prevent the SRAM from being overwritten. Finally, we also discuss related works and the generalisation of our results in more detail. (C) 2019 Elsevier B.V. All rights reserved.
引用
收藏
页数:17
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