XPS analysis of ZnS0.4Se0.6 thin films deposited by spray pyrolysis technique

被引:25
作者
Krishna, Ganesha V. S. [1 ]
Mahesha, M. G. [1 ]
机构
[1] Manipal Acad Higher Educ, Manipal Inst Technol, Dept Phys, Manipal 576104, India
关键词
Thin films; Spray pyrolysis; Ternary chalcogenides; ZnSSe; Photoelectron spectroscopy; OPTICAL-PROPERTIES; SOLAR-CELLS; BAND-GAP; OXIDE; PHOTOLUMINESCENCE; QUANTIFICATION; EFFICIENCY; CO;
D O I
10.1016/j.elspec.2021.147072
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
XPS being important study for the analysis of chemical state and composition at the surface level along with the bonding between elements. XPS study was carried out for the optimized spray deposited ZnS0.4Se0.6 thin films, which is a prominent II-VI ternary chalcogenide optoelectronic material. Core spectra of Zn 2p, S 2p, Se 3d, and Se 3p were recorded for the analysis. As sulfur and selenium coexist in the sample, the detailed analysis of XPS is much needed. Analysis is challenging due to overlapping region of Se 3p peak and S 2p peak. Compared to previous reports, in the present sample, relatively lower charging effects were observed. The binding energies reported here could be used as reference for ZnSSe material. The composition of elements in the sample were also calculated, which agrees with the nominal composition.
引用
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页数:4
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