Simulation of growth dynamics in atomic layer deposition.: Part III.: Polycrystalline films from tetragonal crystallites

被引:21
作者
Nilsen, Ola
Karlsen, Ole Bjorn
Kjekshus, Arne
Fjellvag, Helmer
机构
[1] Univ Oslo, Ctr Mat Sci & Nanotechnol, N-0315 Oslo, Norway
[2] Univ Oslo, Dept Chem, N-0315 Oslo, Norway
[3] Univ Oslo, Dept Phys, N-0316 Oslo, Norway
关键词
atomic layer epitaxy; chemical vapor deposition; simulation; growth dynamics;
D O I
10.1016/j.tsf.2006.11.025
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Materials with one- and two-dimensional crystal structures often form crystals with the shape of needles and platelets, respectively. This should be expected to have great influence on the properties of thin films grown from such materials, and the effect on texture and topography is shown in this paper by a series of simulations. The topic of this paper is the effect of different aspect ratios of crystals with tetragonal symmetry on the resulting thin films. However the major results should also apply to crystals of other types of symmetry having aspect ratios deviating from one. The growth dynamics in atomic layer deposition of polycrystalline thin films have been simulated for randomly oriented and randomly positioned crystallites. Crystalline seed objects adapting shapes of tetragonal boxes with aspect ratios from 0.1 (platelets) to 10 (needles) has been used as examples for growth of films from tetragonal crystals. The dependence of roughness, surface crystal density, and texture on the film thickness is shown. Topography and cross sections of simulated films with different aspect ratios are discussed. Non-linear growth regimes are consistently found in the initial stage of the film formation. A conversion from type-2 to type-l substrate inhibited growth is observed as the aspect ratio deviates significantly from one. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:4550 / 4558
页数:9
相关论文
共 16 条
[1]   Mathematical description of atomic layer deposition and its application to the nucleation and growth of HfO2 gate dielectric layers [J].
Alam, MA ;
Green, ML .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) :3403-3413
[2]  
Buckley H. E., 1951, CRYSTAL GROWTH
[3]   THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].
BURTON, WK ;
CABRERA, N ;
FRANK, FC .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358
[4]   ZnO/Al2O3 nanolaminates fabricated by atomic layer deposition:: growth and surface roughness measurements [J].
Elam, JW ;
Sechrist, ZA ;
George, SM .
THIN SOLID FILMS, 2002, 414 (01) :43-55
[5]  
HOLDEN A, 1960, CRYSTALS CRYSTAL GRO
[6]  
KLEIN C, 1999, MANUAL MINERALOGY, P381
[7]   Comparison of hafnium oxide films grown by atomic layer deposition from iodide and chloride precursors [J].
Kukli, K ;
Ritala, M ;
Sajavaara, T ;
Keinonen, J ;
Leskelä, M .
THIN SOLID FILMS, 2002, 416 (1-2) :72-79
[8]  
Markov I. V., 1995, Crystal Growth for Beginners
[9]   Effect of substrate on the characteristics of manganese(IV) oxide thin films prepared by atomic layer deposition [J].
Nilsen, O ;
Foss, S ;
Fjellvåg, H ;
Kjekshus, A .
THIN SOLID FILMS, 2004, 468 (1-2) :65-74
[10]   Growth of calcium carbonate by the atomic layer chemical vapour deposition technique [J].
Nilsen, O ;
Fjellvåg, H ;
Kjekshus, A .
THIN SOLID FILMS, 2004, 450 (02) :240-247