Hot carrier effects in p-channel polycrystalline silicon thin film transistors fabricated on flexible substrates

被引：2
作者：
Mariucci, Luigi
Gaucci, Paolo
Valletta, Antonio
Templier, Francois
Fortunato, Guglielmo
机构：
[1] CNR, IFN, I-00156 Rome, Italy
[2] CEA, LETI, F-38054 Grenoble, France
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 3B期
关键词：
polycrystalline silicon; thin film transistors; p-channel; hot carrier effects;
D O I：
10.1143/JJAP.46.1299
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We studied the variations of electrical characteristics induced by bias stress on low-temperature polycrystalline silicon (LTPS) p-channel thin film transistors (TFTs) fabricated on metal foil. The transfer characteristics resulted quite stable upon application of prolonged bias stress, whereas the output characteristics presented a reduction of kink-effect. These results have been explained by using a self-consistent model based on the trapping of hot electrons, generated by impact ionisation and injected near drain contact, at both front (gate oxide/channel) and back (substrate/channel) interfaces.
引用
收藏
页码：1299 / 1302
页数：4
相关论文
共 8 条
[1]   A MODEL FOR THE TIME-DEPENDENCE AND BIAS-DEPENDENCE OF P-MOSFET DEGRADATION [J].
BROX, M ;
SCHWERIN, A ;
WANG, Q ;
WEBER, W .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (07) :1184-1196
[2]   Stable p-channel polysilicon thin film transistors fabricated by laser doping technique [J].
Di Gaspare, A ;
Mariucci, L ;
Pecora, A ;
Fortunato, G .
THIN SOLID FILMS, 2005, 487 (1-2) :232-236
[3]   HOT-ELECTRON AND HOLE-EMISSION EFFECTS IN SHORT N-CHANNEL MOSFETS [J].
HOFMANN, KR ;
WERNER, C ;
WEBER, W ;
DORDA, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) :691-699
[4]   THE RELATIONSHIP BETWEEN OXIDE CHARGE AND DEVICE DEGRADATION - A COMPARATIVE-STUDY OF NORMAL-CHANNEL AND PARA-CHANNEL MOSFETS [J].
SCHWERIN, A ;
HANSCH, W ;
WEBER, W .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) :2493-2500
[5]  
TAM S, 1984, IEEE T ELECTRON DEV, V31, P1116
[6]   Gate length dependence of hot carrier reliability in low-temperature polycrystalline-silicon P-channel thin film transistors [J].
Uraoka, Y ;
Morita, Y ;
Yano, H ;
Hatayama, T ;
Fuyuki, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (10) :5894-5899
[7]   Floating body effects in polysilicon thin-film transistors [J].
Valdinoci, M ;
Colalongo, L ;
Baccarani, G ;
Fortunato, G ;
Pecora, A ;
Policicchio, I .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (12) :2234-2241
[8]   EXPLANATION AND MODEL FOR THE LOGARITHMIC TIME-DEPENDENCE OF P-MOSFET DEGRADATION [J].
WANG, Q ;
BROX, M ;
KRAUTSCHNEIDER, WH ;
WEBER, W .
IEEE ELECTRON DEVICE LETTERS, 1991, 12 (05) :218-220
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