Infrared photodetection at room temperature using photocapacitance in amorphous silicon structures

被引：18

作者：

Caputo, D ^{[1
]}

de Cesare, G ^{[1
]}

Nascetti, A ^{[1
]}

Palma, F ^{[1
]}

Petri, M ^{[1
]}

机构：

[1] Univ Rome La Sapienza, Dept Elect Engn, I-00184 Rome, Italy

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 10期

关键词：

D O I：

10.1063/1.121022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we present a device, based on amorphous silicon material, able to detect infrared light through capacitance measurement at room temperature. The device is a p-c-n stacked structure, where c indicates a compensated amorphous silicon absorber layer. Operation is based on transitions between extended states in the valence band and defects in the forbidden gap excited by the infrared radiation. We found that the measured capacitance is sensitive to radiation from 800 nm to 5 mu m. (C) 1998 American Institute of Physics. [S0003-6951(98)02310-9].

引用

页码：1229 / 1231

页数：3

共 12 条

[1]

ADLER D, 1983, SOL CELLS, V9, P1127

[2] CHARACTERIZATION OF INTRINSIC A-SI-H IN P-I-N DEVICES BY CAPACITANCE MEASUREMENTS - THEORY AND EXPERIMENTS [J].

CAPUTO, D ;

DECESARE, G ;

IRRERA, F ;

PALMA, F ;

TUCCI, M .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (06) :3534-3541

[3]

CAPUTO D, IN PRESS J NONCRYST

[4]

CAPUTO D, IN PRESS MAT RES SOC

[5] AMORPHOUS SIGE-H PHOTODETECTORS ON GLASS OPTICAL WAVE-GUIDES [J].

DEIMEL, PP ;

HEIMHOFER, BB ;

KROTZ, G ;

LILIENHOF, HJ ;

WIND, J ;

MULLER, G ;

VOGES, E .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (07) :499-501

[6] A METAL AMORPHOUS-SILICON GERMANIUM ALLOY SCHOTTKY-BARRIER FOR INFRARED OPTOELECTRONIC IC ON GLASS SUBSTRATE APPLICATION [J].

FANG, YK ;

HWANG, SB ;

CHEN, KH ;

LIU, CR ;

KUO, LC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (06) :1350-1354

[7]

FISHER H, 1994, MATER RES SOC S P, V336, P867

[8]

GUHA S, 1994, MATER RES SOC SYMP P, V336, P645, DOI 10.1557/PROC-336-645

[9] HOLE TRAPPING, LIGHT SOAKING, AND SECONDARY PHOTOCURRENT TRANSIENTS IN AMORPHOUS-SILICON [J].

MCMAHON, TJ ;

CRANDALL, RS .

PHYSICAL REVIEW B, 1989, 39 (03) :1766-1771

[10] INFRARED PHOTODETECTION USING A-SI-H PHOTODIODE [J].

OKAMURA, M ;

SUZUKI, S .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (03) :412-414

← 1 2 →