High performance GaN/AlGaN MODFETs grown by RF-assisted MBE

被引：27

作者：

Nguyen, C ^{[1
]}

Nguyen, NX ^{[1
]}

Le, M ^{[1
]}

Grider, DE ^{[1
]}

机构：

[1] Hughes Res Labs, Malibu, CA 90265 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 03期

关键词：

D O I：

10.1049/el:19980198

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High performance 0.25 mu m gate-length GaN/AlGaN modulation doped field effect transistors grown by RF-assisted MBE on sapphire are demonstrated. A maximum drain current of 750mA/mm, and a breakdown voltage exceeding 45V were obtained. Small signal measurement yielded a current gain cutoff frequency of 28GHz, and a maximum oscillation frequency of 426Hz. The authors have achieved < 5% variation in the maximum drain current across 2in wafers. These results demonstrated the excellent potential of RF-assisted MBE in the growth of GaN-based microwave power devices for practical applications.

引用

页码：309 / 311

页数：3

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