Evaluation of junction parameters with control of carrier concentration in Bi2Sr2CaCu2O8+δ stacked junctions

被引：6
作者：
Inomata, K
Sato, S
Nakajima, K
Kim, SJ
Hatano, T
Takano, Y
Nagao, M
Yamashita, T
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
[3] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan
[4] Cheju Natl Univ, Sch Mech Engn, Cheju 690756, Jeju Do, South Korea
来源：
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2004年 / 412卷
关键词：
intrinsic Josephson junctions; carrier concentration; whisker;
D O I：
10.1016/j.physc.2003.12.102
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The control of the critical current density (J(C)) and the junction resistance (R-N) along the c axis of intrinsic Josephson junctions (IJJs) on a high-T-C superconductor is very important for applying the IJJs to electronic devices. For controlling these junction parameters, we have clarified the relationship of J(C), R-N, and the carrier concentration in Bi2Sr2CaCu2O8+delta whiskers by changing the carrier concentration with an annealing process. We determined the electrical transport characteristics of the IJJs. As a result, the J(C) increased, and the R-N decreased systematically when the carrier concentration increased. The values of J(C) and R-N could be controlled by a change in the carrier concentration. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：1396 / 1400
页数：5
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