Voltage and frequency dependent dielectric properties of BST-0.5 thin films on alumina substrates

被引：26
作者：
Delprat, S [1 ]
Quaddari, M
Vidal, F
Chaker, M
Wu, K
机构：
[1] INRS Energie, Varennes, PQ J3X 1S2, Canada
[2] Poly GRAMES Res Ctr, Montreal, PQ H3V 1A2, Canada
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2003年 / 13卷 / 06期
关键词：
BST; coplanar waveguide (CPW); device characterization; ferroelectric thin films; interdigital capacitor (IDC); tunability;
D O I：
10.1109/LMWC.2003.814091
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Dielectric properties of Ba0.5Sr0.5TiO3 (BST-0.5) polycrystalline thin films, deposited on alumina substrates by means of reactive Pulsed Laser Deposition (PLD), were measured at GHz frequencies using an interdigital capacitor (IDC). By applying a voltage up to 40 V between the two groups of lingers at room temperature, a high tunability of similar to27% was achieved at 5 GHz. A relative dielectric constant of similar to500 (consistent with the low-frequency IDC measurements) has been obtained using coplanar wave guides by means of the Through-Reflect-Line (TRL) analysis combined with either a conformal mapping model or a full wave calculation. The BST loss,tangent was estimated as similar to0.05 in the range 3-16 GHz.
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收藏
页码：211 / 213
页数：3
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