Faster ESD device characterization with wafer-level HBM

被引：4

作者：

Scholz, M. ^{[1
]}

Tremoullies, D. ^{[1
]}

Linten, D. ^{[1
]}

Rolain, Y. ^{[2
]}

Pintelon, R. ^{[2
]}

Sawada, M. ^{[3
]}

Nakaei, T. ^{[3
]}

Hasebe, T. ^{[3
]}

Groeseneken, G. ^{[4
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium

[2] Vrije Univ Brussel, Fac Engn, Brussels, Belgium

[3] Hanwa Elect Ind Co Ltd, Wakayama, Japan

[4] Katholieke Univ Leuven, Dept Elect Engn, Leuven, Belgium

来源：

2007 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, PROCEEDINGS | 2007年

关键词：

D O I：

10.1109/ICMTS.2007.374462

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

HBM testers are tools for ESD product qualification whereas TLP testers are used for device characterization. The ability to extract TLP-like IV curves from an HBM system is demonstrated in this paper. Together with measurement results on wafer-level, the full methodology is presented and compared to standard 100 ns TLP measurements. The advantage of this methodology is that the quasi-static characteristic of a ESD protection device can be obtained much faster and with only one test procedure.

引用

页码：93 / +

页数：2