Device optimization for digital subthreshold logic operation

被引:66
作者
Paul, BC [1 ]
Raychowdhury, A [1 ]
Roy, K [1 ]
机构
[1] Purdue Univ, Coll Elect & Comp Engn, W Lafayette, IN 47907 USA
关键词
device optimization; subthreshold operation; ultralow power applications;
D O I
10.1109/TED.2004.842538
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Digital circuits operated in the subthreshold region (supply voltage less than the transistor threshold voltage) can have orders of magnitude power advantage over standard CMOS circuits for applications requiring ultralow power and medium frequency of operation. Although the implication of technology scaling on subthreshold operation is not obvious (since an obsolete technology node can deliver the same performance as a scaled technology in subthreshold), it has been shown that technology scaling helps to reduce the supply-voltage and, hence, the power consumption at iso-performance. It is possible to implement subthreshold logic circuits using the standard transistors that are designed primarily for ultra high performance super-threshold logic design. However, an Si MOSFET so optimized for performance in the super-threshold regime is not the best device to use in the subthreshold domain. In this paper, we propose device designs apt for subthreshold operation. Results show that the optimized device improves the delay and power delay product (PDP) of an inverter chain by 44% and 51%, respectively, over the normal super-threshold device operated in the subthreshold region.
引用
收藏
页码:237 / 247
页数:11
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