Physics-based model of LPT CSTBT including MOS-side two-dimensional effects

被引：4

作者：

Fu, Guicui ^{[1
]}

Xue, Peng ^{[1
]}

机构：

[1] Beijing Univ Aeronaut & Astronaut, Sch Reliabil & Syst Engn, Beijing 100083, Peoples R China

来源：

IET POWER ELECTRONICS | 2016年 / 9卷 / 05期

关键词：

bipolar transistors; MOS integrated circuits; Fourier series; buffer layers; semiconductor device models; physics based model; light punch through; carrier stored trench bipolar transistor; LPT CSTBT; MOS-side two-dimensional effects; Fourier series solution; ambipolar diffusion equation; Matlab; Simulink; trench gate; carrier storage layer; high-level injection; LPT buffer layer; carrier transport; PARAMETER EXTRACTION; BUFFER LAYER; IGBT; SIMULATION; DIODE; OPTIMIZATION;

D O I：

10.1049/iet-pel.2015.0479

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, a physics-based model for light punch through (LPT) carrier stored trench bipolar transistor (CSTBT) is developed. The model is based on the Fourier series solution of ambipolar diffusion equation implemented in MATLAB and Simulink. In the model, the MOS-side two-dimensional (2D) effects resulting from trench gate and carrier storage layer are studied analytically. Assuming high-level injection in LPT buffer layer, the model also describes the carrier transport, redistribution and recombination in the buffer layer in details. The static and transient experiments for a commercial CSTBT are used to validate the presented model. The simulation results are compared with experiment results and good agreement is obtained.

引用

页码：1019 / 1028

页数：10

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