Epitaxial relationship between wurtzite GaN and β-Ga2O3

被引：69
|
作者：
Villora, Encarnacion G.
Shimamura, Kiyoshi
Kitamura, Kenji
Aoki, Kazuo
Ujiie, Takekazu
机构：
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
[2] Koha Co Ltd, Nerima Ku, Tokyo 1760022, Japan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 23期
关键词：
Buffer layers - Epitaxial growth - Molecular beam epitaxy - Nitridation - Transmission electron microscopy;
D O I：
10.1063/1.2745645
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The epitaxial relationship between wurtzite GaN and monoclinic beta-Ga2O3 is studied by transmission electron microscopy. GaN is grown on beta-Ga2O3 by molecular beam epitaxy without any low-temperature buffer layer, obtaining c plane GaN on a plane beta-Ga2O3. The effect of the surface nitridation, which is necessary for the epitaxial growth, is analyzed at the atomic level. The lattice mismatch has a minimum of 2.6% for the in-plane epitaxial relationship < 0 1 1 > O-Ga2(3)parallel to < 1 0 (1) over bar0 >(GaN). (c) 2007 American Institute of Physics.
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页数：3
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