nBn structure based on InAs/GaSb type-II strained layer superlattices

被引：220

作者：

Rodriguez, J. B. ^{[1
]}

Plis, E. ^{[1
]}

Bishop, G. ^{[1
]}

Sharma, Y. D. ^{[1
]}

Kim, H. ^{[1
]}

Dawson, L. R. ^{[1
]}

Krishna, S. ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 04期

关键词：

D O I：

10.1063/1.2760153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on a type-II InAs/GaSb strained layer superlattice (SLS) photodetector using an nBn design that can be used to eliminate both Shockley-Read-Hall generation currents and surface recombination currents, leading to a higher operating temperature. We present such a SLS based structure with a cutoff wavelength of 5.2 mu m at room temperature. Processed devices exhibited a quantum efficiency around 18%, and a shot-noise-limited specific detectivity similar to 10(9) Jones at 4.5 mu m and 300 K, which are comparable to the state of the art values reported for p-i-n photodiodes based on strained layer superlattices. (C) 2007 American Institute of Physics.

引用

页数：2

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