Structural, Morphological, Opto-Electrical and Photoluminescence Studies of Nanoplate Structured Zn-Doped Sn2S3 Thin Films

被引：6

作者：

Gnanamuthu, S. Joshua ^{[1
]}

Jeyakumar, S. Johnson ^{[1
]}

Punithavathi, I. Kartharinal ^{[1
]}

Parasuram, K. ^{[2
]}

Nagarethinam, V. S. ^{[3
]}

Balu, A. R. ^{[3
]}

机构：

[1] TBML Coll, PG & Res Dept Phys, Poraiyar, Tamil Nadu, India

[2] Govt Arts Coll, PG & Res Dept Phys, Poompukar, Tamil Nadu, India

[3] AVVM Sri Pushpam Coll, PG & Res Dept Phys, Poondi, Tamil Nadu, India

来源：

TRANSACTIONS OF THE INDIAN INSTITUTE OF METALS | 2017年 / 70卷 / 06期

关键词：

Doping; Crystal structure; Surface morphology; Photoluminescence; Optical band gap; ELECTRICAL-PROPERTIES; SUBSTRATE-TEMPERATURE; SPRAY-PYROLYSIS; SULFIDE; DEPOSITION; GROWTH;

D O I：

10.1007/s12666-016-0946-0

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

Undoped and Zn-doped Sn2S3 thin films were fabricated by spray pyrolysis technique on glass substrates kept at 400 A degrees C. All the films exhibited orthorhombic crystal structure with a preferential orientation along the (2 1 1) plane. Nanoplate structures were observed from the SEM images and the presence of Zn in the doped films was confirmed from the EDX spectra. The average optical transmittance of all the films in the visible region was found to be nearly equal to 80 %. Film resistivity initially decreased from 3.27 x 10(-1) to 0.78 x 10(-1) Omega-cm for the Sn2S3 thin film doped with 1 wt% Zn concentration and for higher doping concentration it increased. The obtained results showed that the Sn2S3 thin film doped with 1 wt% Zn concentration had better physical properties which made them suitable for photovoltaic applications.

引用

页码：1503 / 1509

页数：7

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