Strain effects in GaN epilayers

被引：6
作者：
Gil, B
Lefebvre, P
Morkoç, H
机构：
[1] Univ Montpellier 2, Ctr Natl Rech Sci, Etud Semicond Grp, F-34095 Montpellier 5, France
[2] Virginia Commonwealth Univ, Coll Engn, Richmond, VA 23284 USA
[3] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23284 USA
来源：
COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE IV PHYSIQUE ASTROPHYSIQUE | 2000年 / 1卷 / 01期
关键词：
wide bandgap semiconductors; strain fields; deformation potentials; excitons;
D O I：
10.1016/S1296-2147(00)00101-3
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
A review is given about the influence of strain fields on the optical properties of GaN epilayers. We find the basic constant of the material: crystal field splitting, spin-orbit interaction parameter, deformation potentials. We discuss the evolution of the exciton binding energy with strain. (C) 2000 Academie des sciences/Editions scientifiques et medicales Elsevier SAS.
引用
收藏
页码：51 / 60
页数：10
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