Enhanced CH4 sensitivity of porous nanosheets-assembled ZnO microflower by decoration with Zn2SnO4

被引:52
作者
Li, Xiaojie [1 ]
Li, Yanwei [1 ,2 ]
Sun, Guang [2 ,3 ]
Zhang, Bo [1 ]
Wang, Yan [2 ,3 ]
Zhang, Zhanying [1 ,3 ]
机构
[1] Henan Polytech Univ, Sch Mat Sci & Engn, Cultivating Base Key Lab Environm Friendly Inorga, Jiaozuo 454000, Henan, Peoples R China
[2] Henan Polytech Univ, Collaborat Innovat Ctr Coal Safety Prod Henan Pro, Jiaozuo 454000, Henan, Peoples R China
[3] Henan Polytech Univ, Sch Chem & Chem Engn, Jiaozuo 454000, Henan, Peoples R China
基金
中国国家自然科学基金;
关键词
Zn2SnO4; Hierarchical structures; CH4; Heterostructures; Gas sensor; GAS-SENSING PROPERTIES; TRIETHYLAMINE; PERFORMANCE; FABRICATION; NANORODS; SENSORS; HETEROSTRUCTURES; NANOSTRUCTURES; NANOWIRES; EVOLUTION;
D O I
10.1016/j.snb.2019.127374
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In recent years, design and synthesis of heterostructured nanomaterials with high gas-sensing performance for detection of flammable and toxic gases has attracted much research interest. In this paper, pristine and Zn2SnO4-decorated ZnO microflowers with the size about 2-5 mu m and assembled by porous nanosheets of about 15 nm in thickness were successfully synthesized via a simple solvothermal method and subsequent calcination process. The methane (CH4) sensing properties of the prepared Zn2SnO4/ZnO were investigated and compared with that of the pure ZnO counterpart. It was found that after decorating with a small amount of Zn2SnO4, the ZnO sensor showed an improved gas sensing properties to CH4. At optimum operating temperature of 250 degrees C, the sensor based on SZ2 (Zn2SnO4/ZnO composite with the optimal Zn2SnO4 contend) showed a response as high as 27.2 to 1000 ppm CH4, which was about 3.2 times higher than that of SZ0 (pristine ZnO) sensor. Meanwhile, the SZ2 sensor also showed a fast response and recover characteristic, low detection limit (1.48 ppm), good repeatability and long-term stability. The Zn2SnO4/ZnO heterostructures related CH4 sensing mechanism was discussed.
引用
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页数:10
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