Manifestation of Concealed Defects in MoS2 Nanospheres for Efficient and Durable Electrocatalytic Hydrogen Evolution Reaction

被引:1
作者
Senthil Kumar, Sakkarapalayam Murugesan [1 ,2 ]
Selvakumar, Karuppiah [1 ]
Karthikeyan, Jeyakumar [2 ,3 ]
Thangamuthu, Rangasamy [1 ,2 ]
Murugan, Palanichamy [2 ,3 ]
Rajput, Parasmani [4 ]
Jha, Shambhu Nath [4 ]
Bhattacharyya, Dibyendu [4 ]
Navascues, Nuria [5 ]
Irusta, Silvia [5 ]
机构
[1] CSIR, Ctr Electrochem Res Inst, Electrochem Mat Sci Div, Karaikkudi 630003, Tamil Nadu, India
[2] CSIR, Ctr Electrochem Res Inst, Acad Sci & Innovat Res, Karaikkudi 630003, Tamil Nadu, India
[3] CSIR, Ctr Electrochem Res Inst, Funct Mat Div, Karaikkudi 630003, Tamil Nadu, India
[4] Bhabha Atom Res Ctr, Atom & Mol Phys Div, Bombay 400085, Maharashtra, India
[5] Univ Zaragoza, Dept Chem Engn, Nanosci Inst Aragon INA, Zaragoza 50018, Spain
来源
CHEMISTRYSELECT | 2017年 / 2卷 / 17期
关键词
Concealed defects; curved surface; HER activity; MoS2; nanospheres; point defects; ACTIVE EDGE SITES; MOLYBDENUM; NANOSHEETS; ELECTRODE; CATALYST; NANOPARTICLES; H-2;
D O I
10.1002/slct.201700103
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
MoS2 nanospheres were formed using a template free hydro-thermal process, which exhibit high catalytic activity towards hydrogen evolution reaction (HER). The extend of defect sites are probed by extended X-ray absorption fine structure which found decrease in co-ordination number at Mo site rather than at S site. DFT calculations identified an uneven strain and defect distribution between two S planes of curved MoS2. Based on hydrogen adsorption on various sites, we identify a new pathway called "extended activity @ shielded defects", for Volmer-Tafel and Volmer-Heyrovsky mechanisms, where H adsorption occurs at exposed S layer driven by defects in underneath S layer of nanosphere. Having higher defect concentration it exhibited excellent HER activity with overpotential of -0.12V, Tafel slope of 90 mV/decade, and higher turnover frequency. Our findings provide an avenue to design and engineer advanced nanostructures for catalysis, electronic devices, and other potential applications.
引用
收藏
页码:4667 / 4672
页数:6
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